Performance Evaluation and Comparative Study of Double Gate SOI MOSFET and FinFET using Silvaco TCAD Tool

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of other structure of transistor such as Silicon on Insulator MOSFET, Double Gate MOSFET and FinFET. In this paper, the semiconductor physics and basic electrical properties of Double Gate MOSFET and FinFET have been described. The performance evaluation and comparative study have been done by various performance parameters with the help of SILVACO TCAD tool. The study shows that Double Gate MOSFET and FinFET have better results than conventional MOSFET and are better option for reducing short channel effects. KeywordsShort Channel effects, Double Gate MOSFET and FinFET